Epitaxial GaN-on-Si wafers Market | Latest Analysis, Demand Trends, Growth Forecast

Power Electronics and RF Device Customers Expanding Consumption Base for Epitaxial GaN-on-Si Wafers Market

Demand for epitaxial GaN-on-Si wafers is increasingly tied to high-voltage power conversion, RF front-end modules, fast charging systems, telecom infrastructure, automotive electrification, and data-center power architectures. By 2026, power electronics applications account for nearly 48% of total Epitaxial GaN-on-Si wafers Market demand, while RF and microwave devices contribute close to 32%. Consumer electronics, satellite communications, defense radar systems, industrial motor drives, and renewable energy converters form the remaining demand share. The market size for Epitaxial GaN-on-Si wafers Market is estimated to exceed USD 1.4 billion in 2026, supported by increasing wafer starts for 6-inch and 8-inch GaN epitaxy lines across Asia Pacific, North America, and Europe.

The customer base remains highly concentrated around integrated device manufacturers (IDMs), foundries, RF component suppliers, and automotive power semiconductor companies. Large-volume procurement is dominated by companies developing GaN power ICs for AI server power supplies, EV onboard chargers, telecom base stations, and high-frequency RF systems. Demand intensity is particularly high among manufacturers supplying 5G infrastructure, fast chargers above 65W, low-loss switching devices, and next-generation server power units operating above 80 PLUS Titanium efficiency levels.

Device-Level Consumption Trends Supporting the Epitaxial GaN-on-Si Wafers Market

The shift from silicon MOSFETs toward GaN-based power architectures has accelerated wafer demand substantially. In 2025, global shipments of GaN power devices crossed 420 million units, with smartphone fast chargers remaining the largest volume application. However, industrial and automotive applications are generating significantly higher wafer-area consumption because of larger die requirements and stricter reliability specifications.

China remains the largest downstream demand center for epitaxial GaN-on-Si wafers, accounting for approximately 38% of global consumption in 2026. The country’s dominance is linked to concentration of consumer electronics manufacturing, telecom equipment production, EV supply chains, and state-backed semiconductor localization initiatives. In March 2025, Innoscience expanded its 8-inch GaN-on-Si production capacity in Suzhou to support annual output exceeding 1 million wafers equivalent, targeting automotive-grade and industrial power semiconductor demand. This expansion directly increased procurement requirements for high-uniformity epitaxial substrates and MOCVD process infrastructure.

Rapid deployment of AI infrastructure is creating another major demand center. Data centers increasingly require high-efficiency power conversion systems capable of reducing thermal losses and electricity consumption. GaN devices fabricated on silicon substrates are increasingly used in server power supplies operating at switching frequencies above 1 MHz. In January 2026, Delta Electronics announced expanded production of high-density AI server power systems in Taiwan and Thailand, with combined investments exceeding USD 500 million. These systems rely heavily on GaN power devices fabricated using epitaxial GaN-on-Si wafers due to efficiency advantages over silicon-based architectures.

Telecom Infrastructure Investments Increasing RF Epitaxy Demand Across Asia and North America

RF applications continue to generate stable demand for GaN epitaxial wafers, especially for high-frequency and high-power communications infrastructure. Massive MIMO deployments, satellite communication systems, and defense radar programs are increasing demand for RF GaN devices operating at higher power densities than conventional LDMOS technologies.

South Korea, Japan, and the United States remain major markets for RF-grade epitaxial GaN-on-Si wafers. In 2025, South Korea’s telecom operators accelerated Open RAN deployment programs alongside dense urban 5G expansion projects. This resulted in higher procurement of GaN RF amplifiers used in base stations operating in high-frequency bands. The country’s advanced semiconductor ecosystem, led by companies manufacturing RF front-end systems and telecom hardware, continues supporting stable demand for epitaxial wafers with low defect density.

Japan maintains a strategically important position because of its RF materials ecosystem and defense electronics industry. In October 2025, Fujitsu expanded development activities related to millimeter-wave communications and advanced radar systems. Such investments increased sourcing requirements for GaN epitaxial materials capable of supporting high-electron-mobility transistor (HEMT) structures.

The United States remains one of the largest consumers of high-performance RF GaN wafers for aerospace and defense applications. The U.S. Department of Defense continues allocating funding toward advanced radar modernization, electronic warfare systems, and satellite communication infrastructure. Demand is concentrated among defense contractors, RF semiconductor companies, and specialized foundries requiring high-reliability epitaxial structures for harsh-environment operation.

Automotive Electrification Changing Customer Mix Within Epitaxial GaN-on-Si Wafers Market

The customer structure of the Epitaxial GaN-on-Si wafers Market is gradually shifting from predominantly consumer-electronics-oriented procurement toward automotive and industrial power semiconductor demand. Automotive qualification cycles remain lengthy, but procurement volumes per platform are rising sharply.

Electric vehicle onboard chargers, DC-DC converters, lidar systems, and traction-related auxiliary electronics are increasingly adopting GaN devices because of switching efficiency and reduced thermal management requirements. In February 2026, STMicroelectronics expanded its partnership activities related to GaN power technologies for automotive converters and industrial applications. This directly increased long-term demand visibility for automotive-qualified epitaxial GaN-on-Si wafers.

Europe is becoming an important demand center because of automotive electrification and industrial automation. Germany, France, and Italy are seeing higher adoption of GaN power architectures in factory automation equipment, EV charging systems, and renewable energy inverters. Germany alone is expected to account for more than 28% of European GaN power semiconductor demand by 2026 because of concentration of automotive OEMs and industrial drive manufacturers.

Automotive customers require low-defect epitaxial layers, stable thermal characteristics, and long operational lifetimes exceeding 15 years. This has pushed suppliers toward tighter process controls in metal-organic chemical vapor deposition (MOCVD) systems, particularly for 8-inch wafer processing.

8-inch GaN-on-Si Transition Influencing Procurement Strategies of Integrated Device Manufacturers

One of the strongest structural trends affecting the Epitaxial GaN-on-Si wafers Market is the transition from 6-inch to 8-inch wafer platforms. Larger wafer diameters improve manufacturing economics, reduce per-device production costs, and support compatibility with existing silicon fabrication infrastructure.

China and Taiwan are leading this transition because of existing large-scale silicon foundry ecosystems. In July 2025, TSMC continued expanding specialty process support for compound semiconductor integration and advanced power device manufacturing. Such developments strengthened regional demand for GaN epitaxy suppliers capable of meeting higher-volume wafer requirements.

The economics of 8-inch epitaxial processing are especially important for consumer fast chargers and data-center power modules, where cost competitiveness against silicon remains critical. Wafer manufacturers capable of maintaining low bowing characteristics, low threading dislocation density, and uniform epitaxial thickness across larger diameters are securing higher-value contracts from IDMs and fabless GaN device companies.

Key customer groups increasingly include:

• Automotive power semiconductor suppliers
• Telecom RF amplifier manufacturers
• AI server power supply manufacturers
• Satellite communication equipment providers
• Defense electronics contractors
• Renewable energy inverter manufacturers
• Industrial motor drive suppliers
• Consumer fast-charging IC companies

Regional Demand Concentration Patterns Across the Epitaxial GaN-on-Si Wafers Ecosystem

Asia Pacific contributes more than 72% of global Epitaxial GaN-on-Si wafers Market demand in 2026. The concentration is driven by semiconductor manufacturing infrastructure, electronics assembly ecosystems, and state-supported compound semiconductor investments.

China dominates high-volume commercial consumption, especially for consumer electronics and telecom equipment. Taiwan remains strategically important because of foundry integration capabilities and advanced semiconductor packaging infrastructure. Japan contributes strongly in RF, industrial, and automotive applications, while South Korea remains heavily tied to telecom and advanced electronics demand.

North America accounts for approximately 16% of global demand, supported primarily by defense electronics, aerospace RF systems, AI data centers, and industrial power electronics. Demand concentration is high among specialized semiconductor companies and defense-focused device manufacturers rather than high-volume consumer electronics producers.

Europe contributes close to 10% of total market demand, with Germany representing the largest regional consumer base due to automotive electrification and industrial automation systems. In April 2025, the European Commission approved additional semiconductor-related investments under the European Chips Act framework, supporting advanced materials and compound semiconductor manufacturing initiatives across Germany, France, and Italy. These programs indirectly strengthened long-term demand expectations for epitaxial GaN-on-Si wafers used in power conversion and RF systems.

Power Density Requirements in AI and Renewable Energy Systems Expanding Future Wafer Consumption

Power efficiency requirements are becoming more aggressive across AI computing infrastructure and renewable energy systems. Hyperscale data centers are increasingly focused on reducing energy loss in power conversion stages because electricity consumption associated with AI model training and inference continues rising rapidly.

GaN-based power devices fabricated on silicon substrates are increasingly used in 48V power architectures, high-density DC-DC converters, and compact server power systems. This is expected to increase demand for high-voltage epitaxial structures optimized for low leakage current and thermal reliability.

Renewable energy installations are also influencing demand patterns. Solar inverter manufacturers and energy-storage system suppliers are increasing adoption of GaN-based switching technologies to improve conversion efficiency and reduce footprint. India, Southeast Asia, and the Middle East are emerging as secondary demand centers because of expanding renewable energy deployment and localized electronics manufacturing initiatives.

Larger Diameter Migration and Low-Defect Epitaxy Reshaping the Epitaxial GaN-on-Si Wafers Market

Technology evolution remains central to the commercial viability of the Epitaxial GaN-on-Si wafers Market because device performance is directly linked to epitaxial layer quality, thermal stability, wafer bow control, and compatibility with standard silicon fabrication infrastructure. Unlike conventional silicon wafers, GaN-on-Si epitaxial structures require complex strain engineering because of lattice mismatch and thermal expansion differences between gallium nitride and silicon substrates. This has made epitaxy capability one of the strongest competitive differentiators across the market.

The industry is steadily transitioning from 6-inch platforms toward 8-inch epitaxial GaN-on-Si wafers to improve manufacturing economics and support higher-volume device production. In 2026, 8-inch wafers are estimated to account for approximately 34% of commercial production capacity, compared with less than 18% three years earlier. This migration is especially relevant for consumer power adapters, AI server power supplies, telecom rectifiers, and automotive power modules where lower die cost is essential for large-scale adoption.

Chinese and Taiwanese producers are aggressively investing in larger wafer processing lines. In August 2025, Enkris Semiconductor expanded its GaN epitaxy production infrastructure for 8-inch wafers in Suzhou, targeting RF and power device applications. The expansion included additional MOCVD reactor installations intended to improve annual production throughput for epitaxial GaN-on-Si wafers serving telecom and industrial OEMs.

Buffer Layer Engineering Becoming Critical for High-Voltage Device Reliability

One of the most important technological developments in the Epitaxial GaN-on-Si wafers Market is advanced buffer layer engineering. High-voltage GaN devices require low leakage current, high breakdown voltage, and strong thermal reliability under continuous switching operation. These characteristics are heavily dependent on epitaxial structure optimization.

Manufacturers are increasingly using multi-layer buffer architectures with AlN nucleation layers and graded AlGaN transition structures to reduce stress accumulation. Advanced strain-management techniques are helping improve wafer flatness while reducing cracking during high-temperature processing. This is especially important for automotive-grade GaN devices operating above 650V.

The automotive ecosystem is imposing stricter reliability standards on epitaxial suppliers. Power semiconductors used in EV onboard chargers and traction-related systems must withstand temperature cycling and long operational lifetimes exceeding 100,000 hours. As a result, epitaxy suppliers are investing heavily in defect-density reduction and tighter process control methodologies.

In November 2025, Aixtron reported increased order intake for advanced MOCVD systems used in GaN power semiconductor manufacturing. Demand came primarily from Asia-based compound semiconductor fabs expanding production for automotive and industrial customers. The growth in MOCVD investments directly reflects rising industry focus on epitaxial precision and scalable wafer uniformity.

Epitaxial GaN-on-Si Wafers Market Segmentation Highlights Across Diameter, Application, and End Use

Key segmentation patterns across the Epitaxial GaN-on-Si wafers Market include:

• By wafer diameter
  • 4-inch wafers
  • 6-inch wafers
  • 8-inch wafers
• By application
  • Power semiconductors
  • RF devices
  • Optoelectronics
  • Automotive electronics
  • Industrial power systems
• By voltage range
  • Below 200V
  • 200V–650V
  • Above 650V
• By end-use ecosystem
  • Consumer electronics
  • Telecom infrastructure
  • Data centers
  • Automotive OEMs
  • Aerospace and defense
  • Renewable energy systems
• By device architecture
  • HEMT devices
  • Enhancement-mode GaN
  • Depletion-mode GaN
  • Integrated GaN power ICs

The 200V–650V segment continues dominating commercial demand because of extensive deployment in fast chargers, server power supplies, telecom rectifiers, and industrial converters. However, the above-650V category is showing faster growth because of renewable energy systems and EV charging infrastructure expansion.

OEM Ecosystem Expanding Beyond Consumer Chargers Into Industrial and Automotive Platforms

The OEM ecosystem surrounding epitaxial GaN-on-Si wafers has diversified substantially over the last four years. Earlier market growth was heavily dependent on smartphone fast chargers and compact consumer adapters. In 2026, a broader industrial ecosystem is driving procurement volumes.

Major OEM demand clusters now include:

OEM Segment	Demand Driver for Epitaxial GaN-on-Si Wafers
Smartphone and notebook brands	High-efficiency compact fast chargers
AI server manufacturers	High-density power conversion
Telecom OEMs	5G base station RF amplifiers and power systems
Automotive OEMs	EV onboard chargers and DC-DC converters
Industrial automation companies	Motor drives and energy-efficient power systems
Renewable energy integrators	Solar inverters and storage systems
Aerospace and defense contractors	Radar and satellite RF electronics

The AI infrastructure ecosystem is becoming increasingly influential. Hyperscale operators are demanding power supplies with efficiency levels above 96%, particularly for GPU-intensive AI clusters. This is increasing procurement of GaN-based switching devices fabricated using high-performance epitaxial wafers.

In June 2025, Vertiv announced expanded manufacturing capacity for high-density power systems supporting AI data centers in North America and Europe. Such investments increase downstream demand for GaN power semiconductors and indirectly support higher consumption of epitaxial GaN-on-Si wafers.

Asia Pacific Retains Production Leadership Through Integrated Semiconductor Ecosystems

Asia Pacific controls more than 78% of global epitaxial GaN-on-Si wafer production capacity in 2026. The regional advantage comes from established semiconductor fabrication ecosystems, proximity to electronics OEMs, MOCVD equipment deployment, and government-backed semiconductor investment programs.

China remains the largest production hub for commercial GaN-on-Si epitaxy. Local suppliers benefit from strong domestic demand linked to telecom infrastructure, EV manufacturing, industrial power electronics, and consumer device production. Government support for compound semiconductor localization has accelerated capital investment into GaN manufacturing facilities.

In January 2026, China’s Ministry of Industry and Information Technology continued prioritizing third-generation semiconductor expansion under national semiconductor development programs. Multiple provincial governments expanded subsidies for compound semiconductor fabs, especially in Jiangsu, Guangdong, and Fujian provinces. These initiatives supported installation of additional epitaxy reactors and advanced wafer-processing infrastructure.

Taiwan maintains strong strategic importance because of its foundry ecosystem and advanced semiconductor integration capabilities. Companies operating in Taiwan are increasingly focused on GaN device integration with advanced packaging technologies and silicon-compatible process flows. The region benefits from deep relationships between wafer suppliers, device designers, OSAT providers, and electronics OEMs.

Japan remains highly influential in specialty materials, MOCVD equipment support ecosystems, and RF semiconductor development. Japanese firms continue supplying critical precursor materials, wafer processing technologies, and advanced characterization systems used in epitaxial GaN-on-Si wafers production.

European and North American Production Focused on Automotive, Defense, and Industrial Reliability

Europe contributes a smaller production share but maintains strong positioning in automotive-grade and industrial GaN ecosystems. Germany, France, and Italy are increasing investments in compound semiconductor manufacturing linked to automotive electrification and industrial automation.

In September 2025, Infineon Technologies expanded GaN-related production activities for industrial and automotive applications at its Villach operations. The company’s investments are closely aligned with rising demand for efficient EV charging infrastructure and renewable energy conversion systems across Europe.

North America remains heavily focused on high-performance RF and defense-related GaN technologies. The United States has a concentrated ecosystem involving aerospace contractors, RF semiconductor companies, defense electronics manufacturers, and advanced research institutions.

The U.S. CHIPS and Science Act continues supporting domestic semiconductor manufacturing expansion. Compound semiconductor projects involving GaN technologies have benefited from federal and state-level incentives, particularly for defense and secure communications infrastructure. These investments are strengthening local epitaxial production capabilities while reducing dependency on imported semiconductor materials.

Production Dynamics Increasing Importance of MOCVD Capacity and Yield Management

Production economics in the Epitaxial GaN-on-Si wafers Market are strongly tied to MOCVD throughput, precursor efficiency, wafer uniformity, and defect reduction rates. Yield losses caused by wafer bowing, cracking, or dislocation density remain significant operational concerns.

Manufacturers are increasingly adopting AI-assisted process monitoring and in-situ metrology systems to improve epitaxial consistency. Advanced reactor designs are also improving gas flow uniformity and thermal distribution across larger wafers.

The number of installed MOCVD reactors dedicated to GaN epitaxy continues rising across China, Taiwan, South Korea, and Japan. At the same time, OEM requirements for automotive reliability and telecom-grade RF performance are forcing tighter qualification standards throughout the supply chain.

As OEM ecosystems shift toward higher-power-density electronics, the Epitaxial GaN-on-Si wafers Market is evolving from a specialized compound semiconductor segment into a strategically important layer within global power electronics and RF manufacturing infrastructure.

 

Competitive Positioning and Integrated Supply Chains Within the Epitaxial GaN-on-Si Wafers Market

The competitive structure of the Epitaxial GaN-on-Si wafers Market remains moderately concentrated, with a limited number of companies possessing large-scale epitaxy capability, advanced MOCVD infrastructure, and qualification access to telecom, automotive, industrial, and defense customers. Entry barriers remain high because manufacturers must maintain low defect density, tight wafer uniformity, and scalable 6-inch and 8-inch processing compatibility.

The top five suppliers collectively account for more than 60% of commercial epitaxial GaN-on-Si wafer supply in 2026, with China-based producers expanding aggressively in high-volume power semiconductor applications. Competition is increasingly influenced by wafer diameter scaling, vertical integration into GaN devices, and long-term supply agreements with OEMs and semiconductor fabs.

Estimated market share positioning in the Epitaxial GaN-on-Si wafers Market during 2026 indicates:

Company	Estimated Strategic Position
Innoscience	Largest share in high-volume GaN-on-Si power ecosystem
IQE	Strong RF epitaxy supplier
Enkris Semiconductor	Expanding 8-inch GaN epitaxy capacity
Soitec	Specialty engineered substrate and GaN wafer ecosystem participant
NTT Advanced Technology	RF and telecom-oriented GaN wafer supply
DOWA Electronics Materials	Compound semiconductor materials and epitaxy support
GlobalWafers	Strategic silicon substrate ecosystem relevance

The Epitaxial GaN-on-Si wafers Market is also influenced by vertically integrated device manufacturers that internally consume large portions of epitaxial output. This makes commercial merchant wafer availability tighter than nominal production capacity suggests.

Innoscience Building Scale Leadership Through 8-inch GaN-on-Silicon Manufacturing

Innoscience has emerged as one of the most influential players in the global GaN-on-Si ecosystem because of its vertically integrated manufacturing structure spanning epitaxial wafers, GaN devices, and power modules. The company operates large-scale 8-inch GaN-on-silicon production lines serving fast chargers, AI data centers, automotive electronics, telecom systems, and industrial power conversion.

By 2024, Innoscience held close to 29.9% share of the global GaN power device market, strengthening its influence over upstream epitaxial wafer demand and pricing dynamics.

The company’s product portfolio includes:

• 40V–700V GaN power devices
• GaN HEMTs for consumer and industrial systems
• Automotive-focused GaN power architectures
• AI data center power solutions
• RF-oriented GaN solutions for telecom infrastructure

In August 2025, Innoscience announced collaboration activities with NVIDIA related to 800V DC AI data-center power architectures. The initiative increased attention toward high-efficiency GaN power conversion systems requiring large-volume epitaxial wafer consumption.

IQE Maintaining Strong Position in RF and Advanced Compound Semiconductor Epitaxy

IQE remains one of the most established suppliers of compound semiconductor epitaxy for RF, wireless infrastructure, and advanced communications applications. The company’s expertise spans gallium nitride, gallium arsenide, and photonics-oriented epitaxial technologies.

IQE’s GaN-related offerings are primarily associated with:

• RF epitaxial wafers
• Wireless infrastructure materials
• Satellite communications applications
• Defense-oriented RF systems
• High-frequency telecom device structures

The company benefits from long-standing relationships with RF semiconductor manufacturers supplying 5G infrastructure, aerospace systems, and defense electronics. Demand for RF-oriented epitaxial GaN-on-Si wafers has remained resilient because telecom OEMs continue upgrading network density and high-frequency coverage infrastructure.

Enkris Semiconductor Expanding Production for Industrial and Telecom Customers

Enkris Semiconductor has strengthened its position in the Epitaxial GaN-on-Si wafers Market through aggressive investment in larger-diameter production lines and MOCVD infrastructure.

The company manufactures:

• GaN-on-Si epitaxial wafers
• GaN HEMT structures
• RF device epitaxy
• Power-device-oriented epitaxial wafers
• 6-inch and 8-inch GaN platforms

In 2025, Enkris expanded production activities in Suzhou to support growing demand from industrial power electronics and telecom infrastructure manufacturers. The company has increasingly focused on supplying high-uniformity epitaxial structures compatible with high-volume device manufacturing.

Its growth is closely linked to China’s domestic semiconductor localization strategy, where telecom OEMs, EV manufacturers, and industrial electronics suppliers are increasing procurement from regional compound semiconductor vendors.

Japanese Ecosystem Companies Retaining Influence in RF and Materials Supply Chains

Japanese suppliers continue maintaining strategic importance in the Epitaxial GaN-on-Si wafers Market because of their expertise in RF materials, specialty substrates, precursor chemicals, and telecom semiconductor ecosystems.

NTT Advanced Technology remains associated with telecom and RF-oriented compound semiconductor materials, especially for high-frequency communications infrastructure.

DOWA Electronics Materials contributes through advanced materials processing and compound semiconductor support technologies linked to power and RF applications.

Japan’s broader compound semiconductor ecosystem also benefits from deep integration between materials suppliers, RF device companies, precision equipment firms, and telecom OEMs. This integration supports stable demand for high-performance epitaxial GaN-on-Si wafers in radar, satellite communication, and wireless infrastructure systems.

European Players Focusing on Engineered Substrates and Automotive Reliability

Soitec continues expanding its relevance within engineered semiconductor substrate technologies and advanced epitaxy ecosystems. The company possesses expertise in GaN and compound semiconductor wafer technologies alongside its broader engineered substrate business.

Soitec’s relevance in the Epitaxial GaN-on-Si wafers Market is tied to:

• Engineered substrate technologies
• RF semiconductor support ecosystems
• GaN wafer engineering
• Advanced epitaxial integration
• Automotive and industrial semiconductor material platforms

European players are particularly focused on automotive-grade reliability and industrial power conversion efficiency. The region’s OEM ecosystem includes EV charging infrastructure suppliers, renewable energy inverter manufacturers, and industrial automation companies requiring long-lifecycle semiconductor reliability.

Manufacturing Ecosystem Controlled by MOCVD Capability and Yield Performance

Competitive differentiation in the Epitaxial GaN-on-Si wafers Market increasingly depends on:

• MOCVD reactor scale
• 8-inch wafer processing capability
• Low threading dislocation density
• Wafer bow management
• Automotive qualification support
• RF reliability performance
• Thermal stability characteristics

The market remains capital intensive because advanced epitaxy requires high-cost MOCVD systems, metrology tools, precursor materials, and defect characterization infrastructure. Companies with strong process control and stable yield performance maintain pricing advantages, especially for automotive and RF-grade wafers.

Fewer than ten suppliers globally currently operate qualified 200 mm GaN-on-Si epitaxial production at meaningful commercial scale.

Recent Industry Developments and Strategic Moves Across the Epitaxial GaN-on-Si Wafers Market

• In August 2025, Innoscience announced collaboration activities with NVIDIA for 800V AI data-center power architectures using GaN technologies.
• In December 2025, onsemi and Innoscience signed a memorandum of understanding related to accelerated GaN power device deployment in the 40V–200V range.
• In November 2025, Aixtron reported stronger order activity for GaN-focused MOCVD systems driven by Asia-based compound semiconductor expansion programs.
• In 2025, China continued expanding provincial support programs for third-generation semiconductors, particularly in Jiangsu and Guangdong, increasing investment into GaN epitaxy and compound semiconductor manufacturing infrastructure.
• In 2026, AI-driven server infrastructure expansion accelerated demand for high-efficiency GaN power semiconductors, indirectly increasing procurement requirements for 8-inch epitaxial GaN-on-Si wafers used in high-density power conversion systems.